News : Leti

January 01 2023

Study of the anisotropy of dopant and compositional gradients in the reference ternary alloy for infrared detection

This thesis concerns the field of HgCdTe infrared detectors for astrophysical applications, for which the Infrared Laboratory of CEA -Leti is a world leader. The student will join the infrared laboratory which includes the entire detector manufacturing process. He will produce the samples using the technological means of elaboration available in the Leti clean room. […] >>

January 01 2023

Development of innovative etching processes for the integration of ferroelectric materials in non-volatile memories

Today, memories are once again a priority for two reasons: data production is growing exponentially. Data storage and transfer consumes up to 90% of the energy in computing systems. Non-volatile memories, which retain information when not powered, are needed to limit energy consumption. Ferroelectric memories (FeRAM or FRAM) are one of the emerging non-volatile memory […] >>

January 01 2023

Large scale parametric characterization, variability study and tests of quantum devices at cryogenic temperatures

A natural way to address the scalability of quantum devices is to design and realise arrays of individual quantum objects with nearest-neighbor interaction. In large-scale semiconductor quantum processors, a quantum bit is encoded in the spin of an isolated electron, trapped in an array of quantum dots (QDs) [1]. Over the years, we have studied […] >>

January 01 2023

RF Cryo-CMOS/Superconductor circuits co-design

Quantum computing is nowadays a strong field of research at CEA-LETI and in numerous institutes and companies around the world. The Quantum Silicon Grenoble project, including CEA-LETI, CEA-IRIG and Néel Institut, aims to achieve a quantum computer based on quantum bits (qubits) in silicon. The operating conditions of qubits (cryogenic temperatures = 1K, high frequencies […] >>

January 01 2023

2D layers of chalcogenide materials growth by van der Waals epitaxy for frugal electronics

Non-volatile magnetic memories (MRAMs), such as STT-MRAMs (Spin-torque Transfer MRAMs), appear to be extremely promising devices for reducing the energy consumption of memories. In this context, a very strong spin-orbit coupling at room temperature has been demonstrated in 2D heterostructures of Tellurium-based chalcogenide materials opening the way to new energy-efficient devices. On the other hand, […] >>
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