News : Research
February 04 2013
Spintronic devices in germanium—at room temperature
- MINATEC
- News
- Research
We could one day see electronic components that combine electric and magnetic currents. A Grenoble-based team of researchers from INAC, UJF, Crocus, CNRS, and Thales has just made a step toward this potential breakthrough. The researchers injected spin-polarized electrons into germanium, a material compatible with microelectronics applications, at room temperature. They used a tunnel junction […] >>
February 04 2013
Memory: Leti researchers observe GST
- MINATEC
- News
- Research
Germanium-Antimony-Tellurium, or GST, is a phase-change material that passes from an amorphous to a crystalline state at temperatures of 100°C to 150°C, making it a good candidate for phase-change memory. However, when looking at GST samples under a transmission microscope, scientists observed that these properties actually turn into a disadvantage. During the ion-beam preparation phase, […] >>
February 04 2013
Leti duo wins Général Ferrié electronics award
- Industry
- MINATEC
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- Research
Leti researchers Olivier Faynot and Claire Fenouillet-Béranger, along with two engineers from STMicroelectronics, won the 2012 Général Ferrié research in electronics award for their 15 years of work on FD-SOI. Their work has led to the development of a smartphone “super chip” at ST-Ericsson that slashes processing times by up to 35% while lengthening battery […] >>
February 04 2013
Prestodiag brings home new awards
- Industry
- Life @ MINATEC
- MINATEC
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- Research
The good news just keeps coming for Prestodiag, a start-up founded in 2012 to develop advanced INAC-ISB bacteria-detection technology. In the space of just a few months, Prestodiag won three awards for innovative start-ups, including one from the Génopôle Evry biotech cluster and one in the French Senate’s entrepreneurship competition. Prestodiag’s fast-detection method is truly […] >>
February 04 2013
Atom probe tomography getting closer to artefact-free 3D reconstruction
- Industry
- News
- Research
Under the French National Research Agency (ANR) Aptitude program, which kicked-off in January 2013, Leti plans to develop artefact-free 3D reconstruction methods for atom probe tomography. The research will lay the groundwork for the future 14 nm technology node and its new FINFET architectures and FD-SOI transistors. Scientists will need new characterization tools if they […] >>