GaN wires for LEDs offer brilliant electrical properties

Categorie(s) : Innovation & Society, Life @ MINATEC, MINATEC, News, Research

Published : 3 February 2014

The geometry of gallium nitride (GaN) wires makes it tough to characterize a single wire’s electrical properties and n and p doping. Researchers from Leti and Institut Néel have found a solution. Using electronic lithography, the researchers connected a wire attached to an insulating substrate to four metal blocks and created a source of heat nearby, making it possible to measure carrier concentration and mobility.
The researchers’ earlier work focused on silicon-doped GaN (n-doping) wires, which turned out to be better conductors than similar planar layers. The researchers are now looking at p-doping characterization. Their goal is to develop high-performance LEDs using GaN wires, which would be must less costly than today’s planar LEDs.




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