Getting closer to denser, more energy-efficient RRAM memory
Categorie(s) : News, Research
Published : 1 April 2019
A team of researchers from Leti working in partnership with Stanford University recently developed a resistive RRAM memory technology with 2.5 times the storage density of conventional flash memory. Instead of using binary coding (high or low resistivity), information can now be assigned five different values. This advance was made possible by materials and read/write mechanisms capable of exploiting intermediary resistivity states.
The RRAM memory developed also uses much less energy than current flash memory during the write phase, making it a high-performance non-volatile system. A neural network demonstrator system built on the technology was presented in San Francisco in February. The partners have published three papers on their findings. They now hope to obtain eight—and possibly even sixteen—values per memory point.