News : Engineering sciences
January 01 2023
Modelling of device aging for energy conversion : toward predictive maintenance of power converters ?
The conversion of electrical energy is currently a major issue within our societies, whether to reduce losses, to allow the integration of a maximum of renewable energy from wind or solar power or to have cleaner mobility (electric vehicles, whatever their size, individual or collective), in industry as well as in the residential sector. The […] >>
January 01 2023
Inductor less DC/DC isolated converter
The aim of this thesis is to design high-efficiency power converters based on resonating piezoelectric transducers. A large part of the work is to develop the electrical cycle able to energetically maintain the piezoelectric resonator in resonance and ensure zero-voltage switching, for electrical energy transfer from the source to the piezoelectric resonator or from the […] >>
January 01 2023
Ferroelectric Tunnel Junctions for neuromorphic applications
The recent discovery of HfO2 ferroelectric properties generates a strong interest for novel non-volatile memory technologies. Among them, HfO2-based Ferroelectric Tunnel Junctions (FTJ) are resistive memories in which the electronic transport, and thus the device conductance, is modulated by the orientation of ferroelectric dipoles within the HfO2 layer. Actually, HfO2-based FTJs are envisaged for mimicking […] >>
January 01 2023
Development of innovative activation plasma processes for direct wafer bonding
For microelectronics industry, SOI (Silicon on Insulator) structure elaboration for the new generation of integrated circuits fabrication relies on wafer bonding by molecular adherence technology. It is based on direct bonding between two surfaces thanks to plasma activation. In the Ph.D.’s framework, we propose to study and to develop new activation processes by plasma in […] >>
January 01 2023
Ferroelectric field effect transistor (FeMFET) for multi-bit per cell memories and in-memory computing applications
The recent discovery of ferroelectricity in hafnium oxide (HfO2) thin films generates a strong interest for ultra-low power non volatile memories, in which the information is stored by the orientation of the electric dipoles in this material. Among those memories, the ferroelectric field effect transistor (FeFET) is quite appealing to combine logic and memory operations […] >>