Why nanowire beats thin film for piezoelectric potential

Categorie(s) : Innovation & Society, News, Research

Published : 5 February 2018

Why would a semiconductor material like zinc oxide (ZnO) offer better piezoelectric properties in nanowire form than as a thin film? Researchers at IMEP-LaHC have come up with an explanation. The tip and sides of the nanowire trap the Fermi level, repelling the free carriers in the material, thus eliminating the typical piezoelectric screening effect. The researchers conducted simulations combining mechanical, piezoelectric, and semiconductor properties to arrive at their conclusion, which also explains other laboratory observations, which, until now, had never been demonstrated theoretically. For IMEP-LaHC, which designs piezoelectric components, the potential applications for the research include mechanical sensors and energy harvesting devices.

Contact: mouis@minatec.grenoble-inp.fr

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