News : DPFT

MOS-HEMT devices have erased a lot of interest in the state of art and specifically for compact and high power density applications. Thanks to the presence of a high bi-dimensional gas electron (2deg) at the AlGaN/GaN heterojunction and the very promising GaN thermal resistance and high mobility, these transistors are capable of supporting high currents […] >>

Today, memories are once again a priority for two reasons: data production is growing exponentially. Data storage and transfer consumes up to 90% of the energy in computing systems. Non-volatile memories, which retain information when not powered, are needed to limit energy consumption. Ferroelectric memories (FeRAM or FRAM) are one of the emerging non-volatile memory […] >>

In order to reduce the manufacturing costs of integrated circuits and continue their miniaturization, disruptive approaches based on the use of selective deposition processes are now being considered in addition to photolithography. Recent developments are mostly linked to the use of atomic layer deposition (ALD) which is a very suitable technique for the development of […] >>

Two-dimensional (2D) materials are defined as crystalline solids consisting of a single layer of atoms, making their properties remarkable. Compared to their massive form, they can present outstanding semiconducting characteristics that can be exploited for many applications (CMOS, memories, photonics, photovoltaics, etc.). However, their integration into components via standard microelectronics processes remains a challenge and […] >>