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P-SCAN pinpoints industrial systems’ vulnerabilities
5G network prototype at Pyeongchang Olympics
Mechanical constraint helps locate quantum light sources
Large-scale two-dimensional MoSe2 production with no tape!
First-ever 600 V/100 A GaN demonstrator transistor for power electronics
SensiNact released as open source
Germanium: spin transistors just over the horizon
INAC recently made a significant advance toward using spin-orbit coupling in transistors as the result of research conducted in conjunction with CNRS Palaiseau and Jülich Research Center of Germany.
As its name indicates, spin-orbit coupling “couples” an electron’s momentum and spin. A new type of MRAM (magnetoresistive RAM) memory potentially capable of pushing back current limits could leverage spin-orbit coupling to multiply the pathways the electrical current can follow during the read and write cycles. Unfortunately, spin-orbit coupling, which makes it possible to manipulate spin, is virtually nonexistent in silicon and germanium, the materials used in today’s microelectronics. One solution is...
MINATEC’s international reputation is what convinced the CEA to appoint me to this new position.
MINATEC’s international reputation is what convinced the CEA to appoint me to this new position.”
In April of this year, you were appointed Director, MINATEC, Advisor to the CEA Chairman for International Innovation Projects. What is your mandate?
The objective is to support the development of the CEA’s international relations. The CEA’s network of partners closely refl ects the organization’s traditional focus areas. My mandate as Director, MINATEC, Advisor to the CEA...